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HRW0202B
Silicon Schottky Barrier Diode for Rectifying
REJ03G0153-0200Z (Previous: ADE-208-345A) Rev.2.00 Dec.15.2003
Features
* Low forward voltage drop and suitable for high efficiency rectifying. * MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRW0202B Laser Mark S18 Package Code MPAK
Pin Arrangement
3
2 1 (Top View)
1. Anode 2. Anode 3. Cathode
Rev.2.00, Dec.15.2003, page 1 of 5
HRW0202B
Absolute Maximum Ratings *1
(Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. Two device total 2. See from Fig.4 to Fig.7 3. 10ms sine wave 1 pulse Symbol VRMM * IO * Tj Tstg
2 3 2
Value 20 200 3 125 -55 to +125
Unit V mA A C C
IFSM *
Electrical Characteristics *1
(Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Symbol VF IR Rth(j-a) Min -- -- -- Typ -- -- 400 Max 0.42 10 -- Unit V A Test Condition IF = 100 mA VR = 20 V
*2
C/W Polyimide board
Notes: 1. Per one device 2. Polyimide board
20hx15wx0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
Rev.2.00, Dec.15.2003, page 2 of 5
HRW0202B
Main Characteristic
1.0 Pulse test 10-1 Ta = 75C
Reverse current IR (A) Forward current IF (A)
10-3 Pulse test 10-4
Ta = 75C
10-2
10-5
10-3 Ta = 25C 10
-4
10-6
Ta = 25C
10-5
10-7
10-6
0
0.1
0.2
0.3
0.4
0.5
0.6
10-8
0
5
10
15
20
25
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
100 f = 1MHz Pulse test
Capacitance C (pF)
10
1.0 1.0
10 Reverse voltage VR (V)
40
Fig3. Capacitance vs. Reverse voltage
Rev.2.00, Dec.15.2003, page 3 of 5
HRW0202B
0.06
0A t T Tj = 25C t D=-- T D=1/6 sin(=180) D=1/3 D=1/2 DC
0.08
Forward power dissipation Pd (W) Reverse power dissipation Pd (W)
0V t T t D=-- T
D=5/6
0.05 0.04 Tj = 125C 0.03
0.06
D=2/3
D=1/2
0.04
sin(=180)
0.02 0.01 0
0.02
0
0
0.02
0.04
0.06
0.08
0.10
0
5
10
15
20
25
Forward current IF (A) Fig.4 Forward power dissipation vs. Forward current
Reverse voltage VR (V) Fig.5 Reverse power dissipation vs. Reverse voltage
0.12
Average rectified current IO (A)
0.25
Average rectified current IO (A)
0.10
sin(=180) DC
0.20
D=1/2 sin(=180) DC
0.08
D=1/2
0.15
D=1/3 D=1/6
0.06 0.04
D=1/3 D=1/6
0.10
0.02 Tj =125C 0 -25
VR=VRRM/2
0.05 VR=VRRM/2
Rth(j-a)=400C/W Per one device
0
25
50
75
100 125
0 -25
Tj =125C Rth(j-a)=400C/W Two device total
0
25
50
75
100 125
Ambient temperature Ta (C) Fig.6 Average rectified current vs. Ambient temperature
Ambient temperature Ta (C) Fig.7 Average rectified current vs. Ambient temperature
Rev.2.00, Dec.15.2003, page 4 of 5
HRW0202B
Package Dimensions
As of January, 2003
Unit: mm
(0.65)
0.10 3-0.4 + 0.05 -
0.16 - 0.06
+ 0.10
1.5 0.15
+ 0.2 - 0.6
0 - 0.1
(0.95) (0.95) 1.9 0.2
0.3 2.8 + 0.1 -
(0.3)
+ 0.2 1.1 - 0.1
(0.65)
2.8
Package Code JEDEC JEITA Mass (reference value)
MPAK -- Conforms 0.011 g
Rev.2.00, Dec.15.2003, page 5 of 5
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